Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Yue Hao, Jin Feng Zhang, "Nitride Wide Bandgap Semiconductor Material and Electronic Devices"
2016 | ISBN-10: 1498745121 | 388 pages | PDF | 21 MB
2016 | ISBN-10: 1498745121 | 388 pages | PDF | 21 MB
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.