Undergraduate Course On Semiconductor Device Physics-Ii

Quantitative & Qualitative analysis of MOS capacitor, MOSFET and BJT

What you'll learn

MOS Capacitor quantitative analysis

MOSFET quantitative and Qualitative treatment

BJT analysis

Mathematical understanding

Requirements

My previous course- "Undergraduate course on semiconductor device physics-II"

Description

This is an undergraduate course on semiconductor device physics. This course is the second part in a series of two courses on semiconductor device physics.For any electronics student understanding transport phenomena of charge carriers, drift current, diffusion current, energy band theory of semiconductors, electron hole pairs(EHPs), Junction formation in a diode, extending the device physics to three terminal devices like BJT and MOSFET is necessary.  My previous course "undergraduate course on semiconductor device physics-I" is a prerequisite for complete understanding of this course.Metal-Oxide-Semiconductor combination forms a capacitor and that capacitive action is to be understood well in terms of threshold voltage, CV characteristics. Though our major focus is on ideal MOS capacitor, non-idealities are also discussed up to some extent.Based on the knowledge of MOS capacitor, if we look at the transport of charge carriers in a three terminal device MOSFET it gives a complete picture of all MOSFET transistor structures namely, enhancement MOSFET & depletion MOSFET in both p-type and n-type substrates. A MOSFET is explained up to threshold control.Another transistor is Bipolar junction transistor(BJT). BJT characteristics and device parameters are explained with respect to input and output characteristics.About Author:Mr. Udaya Bhaskar is an undergraduate university level faculty and GATE teaching faculty with more than 15 years of teaching experience. His areas of interest are semiconductors, electronic devices, signal processing, digital design and other fundamental subjects of electronics.  He trained thousands of students for GATE and ESE examinations.

Overview

Section 1: MOS Capacitor

Lecture 1 Lesson-01 MOS Introduction

Lecture 2 Lesson-02 Energy band theory of MOS- Flat band condition

Lecture 3 Lesson-03 Work function difference & Electron affinity

Lecture 4 Lesson-04 Accumulation mode in energy bands

Lecture 5 Lesson-05 Depletion mode in energy bands

Lecture 6 Lesson-06 Inversion mode in energy bands

Lecture 7 Lesson-07 Inversion mode in energy band structure

Lecture 8 Lesson-08 Surface potential

Lecture 9 Lesson-09 On set of strong inversion

Lecture 10 Lesson-10 Surface potential-Summary

Lecture 11 Lesson-11 Maximum depletion width- Mathematical analysis

Lecture 12 Lesson-12 Ideal MOS curves- Charge density

Lecture 13 Lesson-13 Ideal MOS curves- Field intensity & Potential

Lecture 14 Lesson-14 MOS C-V characteristic curve-I

Lecture 15 Lesson-15 MOS C-V characteristic curve-II

Lecture 16 Lesson-16 MOS capacitor with n-substrate

Lecture 17 Lesson-17 Solved Example-01

Lecture 18 Lesson-18 Solved Example-02

Lecture 19 Lesson-19 Threshold voltage & Inversion charge

Lecture 20 Lesson-20 Non ideal conditions in MOS capacitor

Lecture 21 Lesson-21 Non zero work function difference

Lecture 22 Lesson-22 Oxide charges & Interface traps

Lecture 23 Lesson-23 Threshold voltage under non ideal conditions

Lecture 24 Lesson-24 Solved example-03

Lecture 25 Lesson-25 Solved example-04

Section 2: MOSFET

Lecture 26 Lesson-01 MOSFET- basic structure

Lecture 27 Lesson-02 Induced channel & Implanted channel

Lecture 28 Lesson-03 Threshold voltage for a MOSFET

Lecture 29 Lesson-04 MOSFET 3-D structure

Lecture 30 Lesson-05 MOSFET operation in linear region

Lecture 31 Lesson-06 MOSFET operation in saturation region

Lecture 32 Lesson-07 n-MOSFET characteristics

Lecture 33 Lesson-08 p-MOSFET characteristics

Lecture 34 Lesson-09 MOSFET current equation-I(derivation)

Lecture 35 Lesson-10 MOSFET current equation-II(derivation)

Lecture 36 Lesson-11 Output conductance & Transconductance

Lecture 37 Lesson-12 Channel length modulation

Lecture 38 Lesson-13 Threshold voltage

Lecture 39 Lesson-14 Threshold tailoring implant

Lecture 40 Lesson-15 Body bias effect

Lecture 41 Lesson-16 Oxide layer thickness

Section 3: Bipolar Junction Transistor(BJT)

Lecture 42 Lesson-01 BJT Introduction

Lecture 43 Lesson-02 BJT Basic operation

Lecture 44 Lesson-03 BJT Operation(Contd….)

Lecture 45 Lesson-04 BJT Operating regions

Lecture 46 Lesson-05 BJT Under thermal equilibrium

Lecture 47 Lesson-06 BJT in forward active region

Lecture 48 Lesson-07 BJT current components

Lecture 49 Lesson-08 BJT Common base current gain

Lecture 50 Lesson-09 solved example-01

Lecture 51 Lesson-10 Minority carrier distribution in BJT

Lecture 52 Lesson-11 Minority carrier concentration-Mathematical analysis

Lecture 53 Lesson-12 BJT current equations-I

Lecture 54 Lesson-13 BJT current equations-II

Lecture 55 Lesson-14 BJT emitter current- Mathematical expression

Lecture 56 Lesson-15 BJT collector and Base currents-Mathematical analysis

Lecture 57 Lesson-16 Emitter efficiency revisited

Lecture 58 Lesson-17 Solved example-02

Lecture 59 Lesson-18 Minority carrier distribution-I

Lecture 60 Lesson-19 Minority carrier distribution-II

Lecture 61 Lesson-20 Generalized current expressions

Lecture 62 Lesson-21 Ebers-moll model

Lecture 63 Lesson-22 Base width modulation or early effect

Lecture 64 Lesson-23 Transistor configurations

Lecture 65 Lesson-24 Common base configuration-Input characteristics

Lecture 66 Lesson-25 Common base configuration output characteristics

Lecture 67 Lesson-26 Common emitter configuration

Lecture 68 Lesson-27 CE configuration-Input characteristics

Lecture 69 Lesson-28 CE configuration-Output characteristics

Lecture 70 Lesson-29 BJT as an amplifier

Lecture 71 Lesson-30 Unity gain frequency and transit time

Lecture 72 Lesson-31 BJT as a switch

Lecture 73 Lesson-32 BJT switching action complete analysis

Lecture 74 Lesson-33 Early voltage

Lecture 75 Lesson-34 Breakdown mechanisms- punch through

Lecture 76 Lesson-35 Breakdown mechanism- Avalanche multiplication

Lecture 77 Lesson-36 Solved example-03

Lecture 78 Lesson-37 Solved example-04

Lecture 79 Lesson-38

Undergraduate students in electronics engineering, Communication engineering