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    https://sophisticatedspectra.com/article/drosia-serenity-a-modern-oasis-in-the-heart-of-larnaca.2521391.html

    DROSIA SERENITY
    A Premium Residential Project in the Heart of Drosia, Larnaca

    ONLY TWO FLATS REMAIN!

    Modern and impressive architectural design with high-quality finishes Spacious 2-bedroom apartments with two verandas and smart layouts Penthouse units with private rooftop gardens of up to 63 m² Private covered parking for each apartment Exceptionally quiet location just 5–8 minutes from the marina, Finikoudes Beach, Metropolis Mall, and city center Quick access to all major routes and the highway Boutique-style building with only 8 apartments High-spec technical features including A/C provisions, solar water heater, and photovoltaic system setup.
    Drosia Serenity is not only an architectural gem but also a highly attractive investment opportunity. Located in the desirable residential area of Drosia, Larnaca, this modern development offers 5–7% annual rental yield, making it an ideal choice for investors seeking stable and lucrative returns in Cyprus' dynamic real estate market. Feel free to check the location on Google Maps.
    Whether for living or investment, this is a rare opportunity in a strategic and desirable location.

    Breakdown Phenomena in Semiconductors and Semiconductor Devices (Repost)

    Posted By: nebulae
    Breakdown Phenomena in Semiconductors and Semiconductor Devices (Repost)

    Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein, "Breakdown Phenomena in Semiconductors and Semiconductor Devices"
    English | 2005-09-30 | ISBN: 9812563954 | 224 pages | PDF | 8 MB

    Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.