This book is the most comprehensive treatment yet of the problems faced by the engineer caused by static electricity. Written in as non-technical a manner as possible, given the depth of the material, this book discusses the material from the beginner level to many advanced topics for engineers and designers. It discusses not only the harmful and damaging known effects of static electricity on electrical and electronic equipment, but the possible solutions and applications that can be used to stop it.

The introduction of GaAs/ AIGaAs double heterostructure lasers has opened the door to a new age in the application of compound semiconductor materials to microwave and optical technologies. A variety and combination of semiconductor materials have been investigated and applied to present commercial uses with these devices operating at wide frequencies and wavelengths. Semiconductor modulators are typical examples of this technical evolutions and hsve been developed for commercial use. Although these have a long history to date, we are not aware of any book that details this evolution. Consequently, we have written a book to provide a comprehensive account of semiconductor modulators with emphasis on historical details and experimantal reports. The objective is to provide an up-to-date understanding of semiconductor modulators. Particular attention has been paid to multiple quantum well (MQW) modulators operating at long wavelengths, taking into account the low losses and dispersion in silica fibers occuring at around 1.3 and 1.55 mm. At the present time, MQW structures have been investigated but these have not been sufficiently developed to provide characteristic features which would be instructive enough for readers. One problem is the almost daily publication of papers on semiconductor modulators. Not only do these papers provide additional data, but they often modify the interpretations of particular concepts. Almost all chapters refer to the large number of published papers that can be consulted for future study.

Experts address some of the main issues and uncertainties associated with the design and deployment of Automated Highway Systems (AHS). They discuss new AHS concepts, technology, and benefits, as well as institutional, environmental, and social issues - concerns that will affect dramatically the operation of the current highway system from both the vehicle and infrastructure points of view.

VHDL Answers to Frequently asked Questions is a follow-up to the author's book VHDL Coding Styles and Methodologies (ISBN 0-7923-9598-0). On completion of his first book, the author continued teaching VHDL and actively participated in the comp. lang. vhdl newsgroup. During his experiences, he was enlightened by the many interesting issues and questions relating to VHDL and synthesis. These pertained to: misinterpretations in the use of the language; methods for writing error free, and simulation efficient, code for testbench designs and for synthesis; and general principles and guidelines for design verification. As a result of this wealth of public knowledge contributed by a large VHDL community, the author decided to act as a facilitator of this information by collecting different classes of VHDL issues, and by elaborating on these topics through complete simulatable examples. This book is intended for those who are seeking an enhanced proficiency in VHDL. Its target audience includes: 1. Engineers. The book addresses a set of problems commonly experienced by real users of VHDL. It provides practical explanations to the questions, and suggests practical solutions to the raised issues. It also includes packages to achieve common utilities, useful in the generation of debug code aDd testbench designs. These packages include conversions to strings (the IMAGE package), generation of Linear Feedback Shift Registers (LFSR), Multiple Input Shift Register (MISR), and random number generators.

Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ~m. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8-0. 9 ~m, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage oflow losses in silica fibers occurring around 1. 3 and 1. 55 ~m, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave­ length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave­ lengths. The objective is to provide an up-to-date understanding of semicon­ ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths.

This book has been written as part of a series of scientific books being published by Plenum Press. The scope of the series is to review a chosen topic in each volume. To supplement this information, the abstracts to the most important references cited in the text are reprinted, thus allowing the reader to find in-depth material without having to refer to many additional publications. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Although a number of books have appeared dealing with this area of physics and chemistry, these all deal with parts of the field. This book is unique in that it gives a compact, yet complete, in-depth overview of fundamentals, systems, processes, tools, and applications of etching with gas plasmas for VLSI. Examples are given throughout the fundamental sections, in order to give the reader a better insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referencing between processes and materials, as well as theory and practice. It is thus intended to provide a total model for understanding dry etching. The book has been written such that no previous knowledge of the subject is required. It is intended as a review of all aspects of dry etching for silicon semiconductor processing.

New laser technology has developed a new dye chemistry! Development of the gallium-arsenic semiconductor laser (diode laser) that emits laser light at 780-830 nm has made possible development of new opto-electronic systems including laser optical recording systems, thermal writing display systems, laser printing systems, and so on. Medical applications of lasers in photodynamic therapy for the treatment of cancer were also developed. In such systems, the infrared absorbing dyes OR dyes) are currently used as effective photoreceivers for diode lasers, and will become the key materials in high technology. At the present time the chemistry of IR dyes is the most important and interesting field in dye chemistry. Laser light can be highly monochromatic, very well collimated, coher­ ent, and, in some cases, extremely powerful. These characteristics make diode lasers a very cheap, convenient, and useful light source for a variety of applications in science and technology. For these purposes, however, IR dyes with special characteristics are required. To develop new IR dyes, it is most important to establish the correlation between the chemical structures of dyes and other characteristics of dyes, such as their absorption spectra. Molecular design of IR dyes predicting the Amax and Emax values by molecular orbital (MO) calculations is now possible even by using a personal computer, and many types of new IR dyes have been demonstrated. Also, new opto-electronic systems using IR dyes as photoreceivers have been reported recently.

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The goal of this volume is to comprehensively cover a highly readable, updated and extended, overview on our present knowledge of positive and negative effects of UV‑exposure, with a focus on vitamin D and skin cancer. Topics that are discussed in‑depth by leading researchers and clinicians range from the newest findings in endocrinology, epidemiology, histology, photobiology, immunology, cytogenetics and molecular pathology to new concepts for prophylaxis and treatment.