The Motorola MC68000 family of microprocessors is undoubtedly a revolu­ tionary set of devices. The MC68000 is the first advanced 16-bit microprocessor with a 32-bit internal architecture and the first with 16-megabyte, nonsegment­ ed, direct memory addressing. The processor's six basic addressing modes are equivalent to 14, when one considers all of the variations among these modes. Combined with the device's data and instruction types, the modes provide more than 1000 useful instructions. The book you are about to study has been developed as an aid to the hard­ ware designer and as a supplement to the Motorola seminars on the 68000 microprocessor. The text includes a detailed description of the MC68000 and two complete systems that show how this processor can be interfaced to the outside world. The book follows a "top-down" approach. A brief history of microprocessors is provided first. Chapter 2 details the MC68000 by describing its registers, control lines, and capabilities. Chapter 3 introduces a small MC68000-based system. Although this system is characterized in the book as hypothetical, it is indeed the Educational Computer Board, used in the various Motorola seminars. The addressing modes and instructions are explained in Chapter 4, which includes helpful hints on how instructions can be used. Chapter 5 provides an in-depth description of additional instructions and numerous examples. Chapter 6 discusses exception handling and interrupts.

Radar, like most well developed areas, has its own vocabulary. Words like Doppler frequency, pulse compression, mismatched filter, carrier frequency, in-phase, and quadrature have specific meaning to the radar engineer. In fact, the word radar is actually an acronym for RAdio Detection And Rang­ ing. Even though these words are well defined, they can act as road blocks which keep people without a radar background from utilizing the large amount of data, literature, and expertise within the radar community. This is unfortunate because the use of digital radar processing techniques has made possible the analysis of radar signals on many general purpose digi­ tal computers. Of special interest are the surface mapping radars, such as the Seasat and the shuttle imaging radars, which utilize a technique known as synthetic aperture radar (SAR) to create high resolution images (pic­ tures). This data appeals to cartographers, agronomists, oceanographers, and others who want to perform image enhancement, parameter estima­ tion, pattern recognition, and other information extraction techniques on the radar imagery. The first chapter presents the basics of radar processing: techniques for calculating range (distance) by measuring round trip propagation times for radar pulses. This is the same technique that sightseers use when calculat­ ing the width of a canyon by timing the round trip delay using echoes. In fact, the corresponding approach in radar is usually called the pulse echo technique.

Initial material for this book was developed over a period of several years through the introduction in the mid-seventies of a graduate-level course en­ titled, "Control and Operation of Interconnected Power Systems," at the Georgia Institute of Technology. Subsequent involvement with the utility industry and in teaching continuing education courses on modern power sys­ tem control and operation contributed to the complimentary treatment of the dynamic aspects of this overall topic. In effect, we have evolved a textbook that provides a thorough under­ standing of fudamentals as needed by a graduate student with a prior back­ ground in power systems analysis at the undergraduate level, and in system theory concepts normally provided at the beginning of the graduate level in electrical engineering. It is also designed to provide the depth needed both by the serious graduate student and the power industry engineer involved in the activities of energy control centers and short-term operations planning. As explained in Chapter 2, the entire book can be covered in a two­ quarter course sequence. The bulk of the material may be covered in one semester. For a two-semester offering, we recommend that students be in­ volved in some project work to further their depth of understanding. Utility and consulting industry engineers should concentrate on the more advanced concepts and developments usually available at the latter half of each chap­ter.

When considering the operational performance of stainless steel weldments the most important points to consider are corrosion resistance, weld metal mechanical properties and the integrity ofthe weldedjoint. Mechanical and corrosion resistance properties are greatly influenced by the metallurgical processes that occur during welding or during heat treatment of welded components. This book is aimed, there­ fore, at providing information on the metallurgical problems that may be encountered during stainless steel welding. In this way we aim to help overcome a certain degree of insecurity that is often encountered in welding shops engaged in the welding of stainless steels and is often the cause of welding problems which may in some instances lead to the premature failure of the welded component. The metallurgical processes that occur during the welding of stainless steel are of a highly intricate nature. The present book focuses in particular on the signif­ icance of constitution diagrams, on the processes occurring during the solidification of weld metal and on the recrystallization and precipitation phenomena which take place in the area of the welds. There are specific chapters covering the hot cracking resistance during welding and the practical welding of a number of different stainless steel grades. In addition, recommendations are given as to the most suitable procedures to be followed in order to obtain maximum corrosion resistance and mechanical properties from the weldments.

Recent research on superconductors with high critical temperature has led to results that were not available when the original German edition was prepared but could be included in the present English edition. This concerns materials based on bismuth and thallium, as well as measurements of low microwave loss. The author would like to thank Mr. A. H. Armstrong for translating the book from German to English in a very dedicated and competent manner. Thanks are also due once again to Springer-Verlag for their generous support and cordial cooperation. Bad Salzdetfurth September 1989 Johann H. Rinken Preface to the German Edition The development of materials which lose their electrical resistance when cooled, even before reaching the boiling point of liquid nitrogen, has considerably in­ creased the interest in superconductor technology, and with it superconductor electronics. This development had not been foreseen when work on the present book started, just over a year ago. Nevertheless, recent results of research on materials with high critical temperature are included to the extent that they seem to be confirmed and to be of interest to superconductor electronics. The present book deals with the physical and technological foundations of superconductor electronics so far as they must be known in order to under­ stand the principal modes of operation of superconductor electronics components.

General Applications of BEM to electromagnetic problems are comparatively new although the method is ideally suited to solve these problems, which usually involve unbounded domains. The present volume comprises contributions by eminent researchers working on applications of boundary elements in electromagnetic problems. The volume deals with the solutions of Maxwell's equation for three-dimensional as well as two-dimensional cases. It also discusses combination of BEM with FEM particularly in the case of saturated media. Some chapters specifically deal with the design of electromagnetic devices. The book is essential reading to those engineers and scientists, who are interested in the state of the art for electrical and electromagnetic application of boundary elements. It is also an important reference for those engineers who are working on the design of electromagnetic components many of which can be advantageously carried out using BEM.

Computer Science Workbench is a monograph series which will provide you with an in-depth working knowledge of current developments in computer technology. Every volume in this series will deal with a topic of importance in computer science and elaborate on how you yourself can build systems related to the main theme. You will be able to develop a variety of systems, including computer software tools, computer graphics, computer animation, database management systems, and computer-aided design and manufacturing systems. Computer Science Workbench represents an important new contribution in the field of practical computer technology. TOSIYASU L. KUNII Preface The evolution of database systems research is itself a story. Long after the emergence of systems derived from practical applications, Codd's relational data model has gradually occupied the theoretical domain of database systems and is moving into the realms of practical use. Certainly, the theoretical foundation makes database design, validation, and testing easier. However, Cod d's model allows only fiat tables to be handled, while most business and engineering data in practice are in nested table forms. Thus, a recent major obstacle in database systems development is the large gap between the theory and the practice.

The purpose of this book is to present analysis and design principles, procedures and techniques of analog integrated circuits which are to be implemented in MOS (metal oxide semiconductor) technology. MOS technology is becoming dominant in the realization of digital systems, and its use for analog circuits opens new pos­ sibilities for the design of complex mixed analog/digital VLSI (very large scale in­ tegration) chips. Although we are focusing attention in this book principally on circuits and systems which can be implemented in CMOS technology, many con­ siderations and structures are of a general nature and can be adapted to other promising and emerging technologies, namely GaAs (Gallium Arsenide) and BI­ MOS (bipolar MOS, i. e. circuits which combine both bipolar and CMOS devices) technology. Moreover, some of the structures and circuits described in this book can also be useful without integration. In this book we describe two large classes of analog integrated circuits: • switched capacitor (SC) networks, • continuous-time CMOS (unswitched) circuits. SC networks are sampled-data systems in which electric charges are transferred from one point to another at regular discrete intervals of time and thus the signal samples are stored and processed. Other circuits belonging to this class of sampled-data systems are charge transfer devices (CTD) and charge coupled dev­ ices (CCD). In contrast to SC circuits, continuous-time CMOS circuits operate continuously in time. They can be considered as subcircuits or building blocks (e. g.

Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop­ ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor­ ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis­ tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.

The era of the personal computer has, without doubt, permanently altered our life style in a myriad of ways. The "brain" of the personal computer is the microprocessor (together with RAM and ROM) which makes the decisions needed for the computer to perform in the desired manner. The microprocessor continues to evolve as increasingly complex tasks are required. While not sharing the limelight of the microprocessor, the "heart" of the personal computer, namely the power supply, is equally important since without the necessary source of power the microprocessor would be a useless piece of silicon. The power supply of twenty years ago was much different than its modem day equivalent. At the dawn of the personal computer era in the late 1970s, de power was obtained from a simple diode bridge. However, the need for smooth, regulated DC at low voltage required at the same time both a bulky input transformer and a large dc side ftlter. Those computer fans present at the birth of this industry can remember the large boxes housing our Altair, Cromemco and Northstar computers which was made necessary largely because of the huge power supply. It is not well appreciated but certainly true that the huge sucess of the Apple II computer in those days was due, at least in part, to the relatively slim proftle of the machine. This sleek appearance was largely due to the adoption of the then new and unproven switched mode power supply.

The aim of this book is twofold: it is intended for use as a textbook for a ~ourse on electronic materials (indeed, it stems from a series of lectures on this topic delivered at Milan Polytechnic and at the universities of Modena and Parma), and as an up-to-date review for scientists working in the field ::>f silicon processing. Although a number of works on silicon are already available, the vast amount of existing and new data on silicon properties are nowhere adequately summarized in a single comprehensive report. The present volume is intended to fill this gap. Most of the examples dealt with are taken from the authors' every­ day experience, this choice being dictated merely by their greater knowl­ edge of these areas. Certain aspects of the physics of silicon have not been included; this is either because they have been treated in standard textbooks (e.g. the inhomogeneously doped semiconductor and the chem­ istry of isotropic or preferential aqueous etching of silicon), or because they are still in a rapidly evolving phase (e.g. silicon band-gap engineering, generation-recombination phenomena, cryogenic properties and the chem­ istry of plasma etching). In line with the standard practice in microelectronics, CGS units will be used for mechanical and thermal quantities, and SI units for electrical quan­ tities. All atomic energies will be given in electronvolts and the angstrom will be the unit of length used for atomic phenomena.

Solid-state physics has for many years been one of the largest and most active areas of research in physics, and the physics of metals and semiconductors has in turn been one of the largest and most active areas in solid-state physics. Despite this, it is an area in which new and quite unexpected phenomena - such as the quantum Hall effect - are still being discovered, and in which many things are not yet fully understood. It forms an essential part of any undergraduate physics course. A number of textbooks on solid-state physics have appeared over the years and, because the subject has now grown so large, the books too have usually been large. By aiming at a more limited range of topics, I have tried in this book to cover them within a reasonably small compass. But I have also tried to avoid the phrase 'It can be shown that. . . ', as far as possible, and instead to explain to the reader just why things are the way they are; and sometimes this takes a little longer. I hope that some readers at least will find this approach helpful. 1 The free-electron model 1. 1 THE CLASSICAL DRUDE THEORY The characteristic properties of metals and semiconductors are due to their conduction electrons: the electrons in the outermost atomic shells, which in the solid state are no longer bound to individual atoms, but are free to wander through the solid.

Modern electronics is the most visible result of research in solid state physics. Transistors and integrated circuits are used everywhere in ever increasing numbers. The microprocessor controlled coffee-pot exists. Most experimental physicists, and, indeed, experimental scientists in most disciplines, study their subject with the aid of apparatus containing significant amounts of electronics and much of that electronics is digital. In order to design experiments and apparatus or simply to understand how a piece of equipment works, an under­ standing of electronics has become increasingly important. In recognition that electronics has pervaded so many areas, courses in digital electronics are now a recommended part of physics and many other science degree courses. At the introductory level, digital electronics is, primarily, a practical subject with relatively few basic concepts and any complex­ ity arises from the coupling together of many simple circuits and the extensive use of feedback. Designing an electronic circuit and then getting it to work correctly provides an experience, and a sense of achievement, which is significantly different from most undergradu­ ate work as it more closely resembles project work than standard laboratory practicals.

Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis­ cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci­ ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc­ cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines.