Since the discovery in 1986 of high temperature superconductors by J. G. Bednorz and K. A. Müller, a considerable progress has been made and several important scientific problems have emerged. Within this NATO Advanced Study Institute our intention was to focus mainly on the controversial topic of the symmetry of the superconducting gap and given the very short coherence length, the role of fluctuations. The Institute on ‘The Gap Symmetry and Fluctuations in High- Superconductors’ took place in the “Institut d’Etudes Scientifiques de Cargèse” in Corsica, France, between 1 - 13 September 1997. The 110 participantsfrom 18 countries (yet 30 nationalities) including 23 full time lecturers, have spent two memorable weeks in this charming Mediterranean resort. All lecturers were asked to prepare pedagogical papers to clearly present the central physical idea behind specific model or experiment. The better understanding of physics of high temperature superconductivity is certainly needed to guide the development of applications of these materials in high and weak current devices.

Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP.

Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described.

Quantum well devices have been the objects of intensive research during the last two decades. Some of the devices have matured into commercially useful products and form part of modern electronic circuits. Some others require further dev- opment, but have the promise of being useful commercially in the near future. Study of the devices is, therefore, gradually becoming compulsory for electronics specialists. The functioning of the devices, however, involve aspects of physics which are not dealt with in the available text books on the physics of semicond- tor devices. There is, therefore, a need for a book to cover all these aspects at an introductory level. The present book has been written with the aim of meeting this need. In fact, the book grew out of introductory lectures given by the author to graduate students and researchers interested in this rapidly developing area of electron devices. The book covers the subjects of heterostructure growth techniques, band-offset theory and experiments, electron states, electron-photon interaction and related phenomena, electron transport and the operation of electronic, opto-electronic and photonic quantum well devices. The theory as well as the practical aspects of the devices are discussed at length. The aim of the book is to provide a comprehensive treatment of the physics underlying the various devices. A reader after going through the book should find himself equipped to deal with all kinds of quantum well devices.

The purpose of this book is to provide the reader with a self-contained treatment of fundamen­ tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p–n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high­ speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat­ erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.

The majority of the chapters in this volume represent a series of lectures. that were given at a workshop on quantum transport in ultrasmall electron devices, held at San Miniato, Italy, in March 1987. These have, of course, been extended and updated during the period that has elapsed since the workshop was held, and have been supplemented with additional chapters devoted to the tunneling process in semiconductor quantum-well structures. The aim of this work is to review and present the current understanding in nonequilibrium quantum transport appropriate to semiconductors. Gen­ erally, the field of interest can be categorized as that appropriate to inhomogeneous transport in strong applied fields. These fields are most likely to be strongly varying in both space and time. Most of the literature on quantum transport in semiconductors (or in metallic systems, for that matter) is restricted to the equilibrium approach, in which spectral densities are maintained as semiclassical energy­ conserving delta functions, or perhaps incorporating some form of collision broadening through a Lorentzian shape, and the distribution functions are kept in the equilibrium Fermi-Dirac form. The most familiar field of nonequilibrium transport, at least for the semiconductor world, is that of hot carriers in semiconductors.

This book provides a comprehensive overview of the application of the newest laser and microscope/ophthalmoscope technology in the field of high resolution imaging in microscopy and ophthalmology. Starting by describing High-Resolution 3D Light Microscopy with STED and RESOLFT, the book goes on to cover retinal and anterior segment imaging and image-guided treatment and also discusses the development of adaptive optics in vision science and ophthalmology. Using an interdisciplinary approach, the reader will learn about the latest developments and most up to date technology in the field and how these translate to a medical setting.

Once the second edition was safely off to the printer, the 110 larger world of micro-CT and micro-MRI and the smaller world authors breathed a sigh of relief and relaxed, secure in the belief revealed by the scanning and transmission electron microscopes. that they would “never have to do that again. ” That lasted for 10 To round out the story we even have a chapter on what PowerPoint years. When we ?nally awoke, it seemed that a lot had happened. does to the results, and the annotated bibliography has been In particular, people were trying to use the Handbook as a text- updated and extended.
book even though it lacked the practical chapters needed. There As with the previous editions, the editor enjoyed a tremendous had been tremendous progress in lasers and ?ber-optics and in our amount of good will and cooperation from the 124 authors understanding of the mechanisms underlying photobleaching and involved. Both I, and the light microscopy community in general, phototoxicity. It was time for a new book. I contacted “the usual owe them all a great debt of gratitude. On a more personal note, I suspects” and almost all agreed as long as the deadline was still a would like to thank Kathy Lyons and her associates at Springer for year away.

Electron microscopy has revolutionized our understanding the extraordinary intellectual demands required of the mi­ of materials by completing the processing-structure-prop­ croscopist in order to do the job properly: crystallography, erties links down to atomistic levels. It now is even possible diffraction, image contrast, inelastic scattering events, and to tailor the microstructure (and meso structure ) of materials spectroscopy. Remember, these used to be fields in them­ to achieve specific sets of properties; the extraordinary abili­ selves.

Scanning Probe Microscopy is a comprehensive source of information for researchers, teachers, and graduate students about the rapidly expanding field of scanning probe theory. Writing in a tutorial style, the authors explain from scratch the theory behind today’s simulation techniques and give examples of theoretical concepts through state-of-the-art simulations, including the means to compare these results with experimental data. The book provides the first comprehensive framework for electron transport theory with its various degrees of approximations, thus allowing extensive insight into the physics of scanning probes. Experimentalists will appreciate how the materials properties influence the instrument's operation, and theorists will understand how simulations can be directly compared to experimental data.

This volume contains the edited lectures of the fourth Mittelwihr school on 'Magnetism and Synchrotron Radiation'. This series of events introduces graduate students and nonspecialists from related disciplines to the field of magnetism and magnetic materials with emphasis on synchrotron radiation as an experimental tool of investigation. These lecture notes present in particular the state of the art regarding the analysis of magnetic properties of new materials.

Solid-State spectroscopy is a burgeoning field with applications in many branches of science, including physics, chemistry, biosciences, surface science, and materials science. Handbook of Applied Solid-State Spectroscopy brings together in one volume information about various spectroscopic techniques that is currently scattered in the literature of these disciplines. This concise yet comprehensive volume covers theory and applications of a broad range of spectroscopies, including NMR, NQR, EPR/ESR, ENDOR, scanning tunneling, acoustic resonance, FTIR, auger electron emission, x-ray photoelectron emission, luminescence, and optical polarization, and more. Emphasis is placed on fundamentals and current methods and procedures, together with the latest applications and developments in the field.

Thermoluminescence (TL) is a well-established technique widely used in do- metric and dating applications. Although several excellent reference books exist which document both the t- oretical and experimental aspects of TL, there is a general lack of books that deal withspeci?cnumericalandpracticalaspectsofanalyzingTLdata. Manytimesthe practicaldetailsofanalyzingnumericalTLglowcurvesandofapplyingtheoretical models are dif?cult to ?nd in the published literature. The purpose of this book is to provide a practical guide for both established researchers and for new graduate students entering the ?eld of TL and is intended to be used in conjunction with and as a practical supplement of standard textbooks in the ?eld. Chapter1 lays the mathematical ground work for subsequent chapters by preseing the fundamental mathematical expressions most comm only used for analyzing experimental TL data.