Since the discovery in 1986 of high temperature superconductors by J. G. Bednorz and K. A. Müller, a considerable progress has been made and several important scientific problems have emerged. Within this NATO Advanced Study Institute our intention was to focus mainly on the controversial topic of the symmetry of the superconducting gap and given the very short coherence length, the role of fluctuations. The Institute on ‘The Gap Symmetry and Fluctuations in High- Superconductors’ took place in the “Institut d’Etudes Scientifiques de Cargèse” in Corsica, France, between 1 - 13 September 1997. The 110 participantsfrom 18 countries (yet 30 nationalities) including 23 full time lecturers, have spent two memorable weeks in this charming Mediterranean resort. All lecturers were asked to prepare pedagogical papers to clearly present the central physical idea behind specific model or experiment. The better understanding of physics of high temperature superconductivity is certainly needed to guide the development of applications of these materials in high and weak current devices.

This book provides knowledge of the basic theory, spectral analysis methods, chemometrics, instrumentation, and applications of near-infrared (NIR) spectroscopy—not as a handbook but rather as a sourcebook of NIR spectroscopy.

The author introduces conservation science and management of cultural heritages in museums. In particular, a comprehensive conservation study and practical techniques are described. Aspects such as examination and diagnosis of cultural heritage by scientific data recording of humidity, luminosity, intensity of vibration and shock, among others, are introduced. Preventive and remedial conservation with X-ray imaging and X-ray fluorescence and other risk-control methods are also explained.

Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP.

Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described.

This textbook delivers a comprehensive review of modern spectroscopy encompassing a plethora of various X-ray, photoelectron, optical and laser, as well as radiofrequency and microwave spectroscopic techniques. On the fundamental side, it focuses on physical principles and the impact of spectroscopy on our understanding of the building blocks of matter, while in the area of applications, particular attention is given to those in chemical analysis, photochemistry, surface characterization, environmental and medical diagnostics, remote sensing at short and long ranges, and astrophysics. It features detailed discussion of laser cooling and trapping, Bose–Einstein condensation, ultra-fast spectroscopy, high-power laser–matter interaction, spectroscopy and imaging in astronomy, and various spectroscopic aspects of laser medicine.

Quantum well devices have been the objects of intensive research during the last two decades. Some of the devices have matured into commercially useful products and form part of modern electronic circuits. Some others require further dev- opment, but have the promise of being useful commercially in the near future. Study of the devices is, therefore, gradually becoming compulsory for electronics specialists. The functioning of the devices, however, involve aspects of physics which are not dealt with in the available text books on the physics of semicond- tor devices. There is, therefore, a need for a book to cover all these aspects at an introductory level. The present book has been written with the aim of meeting this need. In fact, the book grew out of introductory lectures given by the author to graduate students and researchers interested in this rapidly developing area of electron devices. The book covers the subjects of heterostructure growth techniques, band-offset theory and experiments, electron states, electron-photon interaction and related phenomena, electron transport and the operation of electronic, opto-electronic and photonic quantum well devices. The theory as well as the practical aspects of the devices are discussed at length. The aim of the book is to provide a comprehensive treatment of the physics underlying the various devices. A reader after going through the book should find himself equipped to deal with all kinds of quantum well devices.

The purpose of this book is to provide the reader with a self-contained treatment of fundamen­ tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p–n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high­ speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat­ erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.

The majority of the chapters in this volume represent a series of lectures. that were given at a workshop on quantum transport in ultrasmall electron devices, held at San Miniato, Italy, in March 1987. These have, of course, been extended and updated during the period that has elapsed since the workshop was held, and have been supplemented with additional chapters devoted to the tunneling process in semiconductor quantum-well structures. The aim of this work is to review and present the current understanding in nonequilibrium quantum transport appropriate to semiconductors. Gen­ erally, the field of interest can be categorized as that appropriate to inhomogeneous transport in strong applied fields. These fields are most likely to be strongly varying in both space and time. Most of the literature on quantum transport in semiconductors (or in metallic systems, for that matter) is restricted to the equilibrium approach, in which spectral densities are maintained as semiclassical energy­ conserving delta functions, or perhaps incorporating some form of collision broadening through a Lorentzian shape, and the distribution functions are kept in the equilibrium Fermi-Dirac form. The most familiar field of nonequilibrium transport, at least for the semiconductor world, is that of hot carriers in semiconductors.

Recent years have seen an explosion in the volume of work carried out using supersonic jets of molecules following the discovery that the technique could provide information on structure and dynamics of a very high quality otherwise impossible to obtain. Written and edited by a first class team of authors, acknowledged world leaders in their subjects, this book describes applications in detail along with analysis of data recorded and background theory. Physical chemists and chemical physicists will find this unique book an essential concentrated source of information and reference.

This comprehensive overview of biomedical applications of vibrational spectroscopy focuses on methodologies that are most relevant to biodiagnostics. After a few introductory chapters that summarize the current status of the field, the reference covers current spectroscopic applications; new spectroscopic directions; and study design and the analysis of vibrational spectral fingerprints from complex biological and clinical samples . With chapters contributed by leading international experts, Biomedical Vibrational Spectroscopy is a core resource.

This volume contains the edited lectures of the fourth Mittelwihr school on 'Magnetism and Synchrotron Radiation'. This series of events introduces graduate students and nonspecialists from related disciplines to the field of magnetism and magnetic materials with emphasis on synchrotron radiation as an experimental tool of investigation. These lecture notes present in particular the state of the art regarding the analysis of magnetic properties of new materials.

Solid-State spectroscopy is a burgeoning field with applications in many branches of science, including physics, chemistry, biosciences, surface science, and materials science. Handbook of Applied Solid-State Spectroscopy brings together in one volume information about various spectroscopic techniques that is currently scattered in the literature of these disciplines. This concise yet comprehensive volume covers theory and applications of a broad range of spectroscopies, including NMR, NQR, EPR/ESR, ENDOR, scanning tunneling, acoustic resonance, FTIR, auger electron emission, x-ray photoelectron emission, luminescence, and optical polarization, and more. Emphasis is placed on fundamentals and current methods and procedures, together with the latest applications and developments in the field.

Thermoluminescence (TL) is a well-established technique widely used in do- metric and dating applications. Although several excellent reference books exist which document both the t- oretical and experimental aspects of TL, there is a general lack of books that deal withspeci?cnumericalandpracticalaspectsofanalyzingTLdata. Manytimesthe practicaldetailsofanalyzingnumericalTLglowcurvesandofapplyingtheoretical models are dif?cult to ?nd in the published literature. The purpose of this book is to provide a practical guide for both established researchers and for new graduate students entering the ?eld of TL and is intended to be used in conjunction with and as a practical supplement of standard textbooks in the ?eld. Chapter1 lays the mathematical ground work for subsequent chapters by preseing the fundamental mathematical expressions most comm only used for analyzing experimental TL data.