Why write another book on mechanics? There are, after all, a number of excellent texts that describe in great detail the way classical solids behave when acted upon by static and time-varying forces; many of these are cited in this monograph. These texts treat solids as continuous objects, and quantum mechanics does not enter the discussion. Furthermore, the atomic nature of the solid is implicit, but does not enter in a central role. At the other end of the spectrum, texts on condensed matter physics focus on the quantum mechanical nature of the solid; these contain quite clear descriptions of acou­ stic waves in solids, describing their dynamic and thermal properties, and how they interact with electrons in the solid, but contain little information regarding bulk deformations. This text, focussing on the mechanics of very small objects, attempts to provide a link between these two approaches; in addition to describing the theories of both the classical and the quantum mechanical solid, I attempt to outline where the classical description breaks down, and quantum mechanics must be applied, to understand the behavior of a nanoscale object. I have tried to merge the continuum description of the solid with the atomic one, and to show how and where quantum mechanics plays a role, especially as the size scale of the system is reduced, making the quantized energy scale larger and the role of thermal vibrations more important.

A systematic treatment, based on Green's functions and integral equations, is given to the analytical and numerical methods and results for a great number of 3-D contact problems for elastic bodies. Semi-bounded elastic bodies (layer, cylinder, space with cylindrical or spherical cavity, 3-D wedge, special cases of which are half- and quarter-spaces, cone) and finite elastic bodies (circular plate, finite cylinder, spherical layer, spherical lens, sphere) are considered. Methods introduced in the book can also be applied in fracture mechanics, hydrodynamics, electrostatics, thermodynamics and diffusion theory, continuum mechanics, and mathematical physics, as well as by engineers and students in mathematics, mechanics, and physics.

Mathematics plays an important role in many scientific and engineering disciplines. This book deals with the numerical solution of differential equations, a very important branch of mathematics. Our aim is to give a practical and theoretical account of how to solve a large variety of differential equations, comprising ordinary differential equations, initial value problems and boundary value problems, differential algebraic equations, partial differential equations and delay differential equations.

This volume includes contributions on the physical and numerical modeling of materials processing, and covers a range of metals and minerals. Authors present models and results related to the basics of processing such as extraction, joining, separation, and casting. The corresponding fundamentals of mass and heat transport as well as physical and thermodynamics properties are addressed, allowing for a cross-disciplinary vision of the field.

Electron microscopy has revolutionized our understanding the extraordinary intellectual demands required of the mi­ of materials by completing the processing-structure-prop­ croscopist in order to do the job properly: crystallography, erties links down to atomistic levels. It now is even possible diffraction, image contrast, inelastic scattering events, and to tailor the microstructure (and meso structure ) of materials spectroscopy. Remember, these used to be fields in them­ to achieve specific sets of properties; the extraordinary abili­ selves.

The format of this edition remains unchanged from previous editions but the majority of entries have received some revision. In particular, units are now in SI units wherever possible, although with certain of the classical entries this is not possible. Chemical terminology has proved a particular problem. We have kept the common names for organic compounds because of the wide readership of this book but we have added an extra table giving the equivalent systematic names and the formulae. We have tried to avoid omission of any named effects and laws that have wide usage. Nevertheless, in order to keep the book to a manageable length, it has been necessary to make a selection among the less commonly used terms and it is inevitable that some arbitrary choices and omissions must be made. Some entries from earlier editions have been left out to make room for other entries which we feel have become more important. We are especially grateful to those readers who have pointed out previous omissions. D.W.G.B. Imperial College, Uni!.:ersity of London D.R.L.

This book provides an introduction to many-body methods for applications in quantum chemistry. These methods, originating in field-theory, offer an alternative to conventional quantum-chemical approaches to the treatment of the many-electron problem in molecules. Starting with a general introduction to the atomic and molecular many-electron problem, the book then develops a stringent formalism of field-theoretical many-body theory, culminating in the diagrammatic perturbation expansions of many-body Green's functions or propagators in terms of Feynman diagrams. It also introduces and analyzes practical computational methods, such as the field-tested algebraic-diagrammatic construction (ADC) schemes. The ADC concept can also be established via a wave-function based procedure, referred to as intermediate state representation (ISR), which bridges the gap between propagator and wave-function formulations. Based on the current rapid increase in computer power and the development of efficient computational methods, quantum chemistry has emerged as a potent theoretical tool for treating ever-larger molecules and problems of chemical and physical interest. Offering an introduction to many-body methods, this book appeals to advanced students interested in an alternative approach to the many-electron problem in molecules, and is suitable for any courses dealing with computational methods in quantum chemistry.

The application of the Monte Carlo method to the simulation of semiconductor devices is presented. A review of the physics of transport in semiconductors is given, followed by an introduction to the physics of semiconductor devices. The Monte Carlo algorithm is discussed in great details, and specific applications to the modelling of semiconductor devices are given. A comparison with traditional simulators is also presented.